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Inhomogeneities in Ni∕4H-SiC Schottky barriers: Localized Fermi-level pinning by defect states

Overview of attention for article published in Journal of Applied Physics, June 2007
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Title
Inhomogeneities in Ni∕4H-SiC Schottky barriers: Localized Fermi-level pinning by defect states
Published in
Journal of Applied Physics, June 2007
DOI 10.1063/1.2745436
Authors

D. J. Ewing, L. M. Porter, Q. Wahab, X. Ma, T. S. Sudharshan, S. Tumakha, M. Gao, L. J. Brillson

Mendeley readers

Mendeley readers

The data shown below were compiled from readership statistics for 48 Mendeley readers of this research output. Click here to see the associated Mendeley record.

Geographical breakdown

Country Count As %
Japan 2 4%
India 1 2%
France 1 2%
Unknown 44 92%

Demographic breakdown

Readers by professional status Count As %
Student > Ph. D. Student 17 35%
Researcher 15 31%
Student > Master 6 13%
Student > Bachelor 2 4%
Professor 1 2%
Other 2 4%
Unknown 5 10%
Readers by discipline Count As %
Engineering 18 38%
Materials Science 12 25%
Physics and Astronomy 9 19%
Energy 1 2%
Computer Science 1 2%
Other 1 2%
Unknown 6 13%