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Silicon Carbide : Recent Major Advances

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Cover of 'Silicon Carbide : Recent Major Advances'

Table of Contents

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    Book Overview
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    Chapter 1 Zero- and Two-Dimensional Native Defects
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    Chapter 2 Defect Migration and Annealing Mechanisms
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    Chapter 3 Hydrogen in SiC
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    Chapter 4 Electronic Properties of Stacking Faults and Thin Cubic Inclusions in SiC Polytypes
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    Chapter 5 Principles and Limitations of Numerical Simulation of SiC Boule Growth by Sublimation
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    Chapter 6 Defect Formation and Reduction During Bulk SiC Growth
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    Chapter 7 High Nitrogen Doping During Bulk Growth of SiC
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    Chapter 8 Homoepitaxial and Heteroepitaxial Growth on Step-Free SiC Mesas
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    Chapter 9 Low-Defect 3 C -SiC Grown on Undulant-Si (001) Substrates
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    Chapter 10 New Development in Hot Wall Vapor Phase Epitaxial Growth of Silicon Carbide
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    Chapter 11 Formation of SiC Thin Films by Ion Beam Synthesis
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    Chapter 12 Atomic Structure of SiC Surfaces
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    Chapter 13 The Continuum of Interface-Induced Gap States — The Unifying Concept of the Band Lineup at Semiconductor Interfaces — Application to Silicon Carbide
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    Chapter 14 Contributions to the Density of Interface States in SiC MOS Structures
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    Chapter 15 Properties of Nitrided Oxides on SiC
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    Chapter 16 Hall Effect Studies of Electron Mobility and Trapping at the SiC/SiO 2 Interface
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    Chapter 17 Optical Properties of SiC: 1997–2002
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    Chapter 18 Cyclotron Resonance Studies of Effective Masses and Band Structure in SiC
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    Chapter 19 Electronic Structure of Deep Defects in SiC
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    Chapter 20 Phosphorus-Related Centers in SiC
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    Chapter 21 Hall Scattering Factor for Electrons and Holes in SiC
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    Chapter 22 Radiotracer Deep Level Transient Spectroscopy
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    Chapter 23 Vacancy Defects Detected by Positron Annihilation
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    Chapter 24 Characterization of Defects in SiC Crystals by Raman Scattering
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    Chapter 25 Characterization of Low-Dimensional Structures in SiC Using Advanced Transmission Electron Microscopy
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    Chapter 26 Synchrotron White Beam X-Ray Topography and High Resolution X-RayDiffraction Studies of Defects in SiC Substrates, Epilayers and Device Structures
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    Chapter 27 Ohmic Contacts for Power Devices on SiC
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    Chapter 28 Micromachining of SiC
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    Chapter 29 Surface Preparation Techniques for SiC Wafers
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    Chapter 30 Epitaxial Growth and Device Processing of SiC on Non-Basal Planes
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    Chapter 31 SiC Power Bipolar Transistors and Thyristors
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    Chapter 32 High Voltage SiC Devices
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    Chapter 33 Power MOSFETs in 4 H -SiC: Device Design and Technology
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    Chapter 34 Normally-Off Accumulation-Mode Epi-Channel Field Effect Transistor
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    Chapter 35 Development of SiC Devices for Microwave and RF Power Amplifiers
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    Chapter 36 Advances in SiC Field Effect Gas Sensors
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Title
Silicon Carbide : Recent Major Advances
Published by
Springer Berlin Heidelberg, April 2013
DOI 10.1007/978-3-642-18870-1
ISBNs
978-3-64-218870-1, 978-3-64-262333-2
Editors

Choyke, W. J., Pensl, G., Matsunami, H.

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Mendeley readers

Mendeley readers

The data shown below were compiled from readership statistics for 62 Mendeley readers of this research output. Click here to see the associated Mendeley record.

Geographical breakdown

Country Count As %
United States 1 2%
Germany 1 2%
Unknown 60 97%

Demographic breakdown

Readers by professional status Count As %
Student > Ph. D. Student 19 31%
Researcher 16 26%
Student > Master 8 13%
Student > Doctoral Student 4 6%
Student > Bachelor 3 5%
Other 5 8%
Unknown 7 11%
Readers by discipline Count As %
Engineering 17 27%
Physics and Astronomy 14 23%
Materials Science 11 18%
Chemistry 6 10%
Social Sciences 1 2%
Other 3 5%
Unknown 10 16%