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Ferroelectric-Gate Field Effect Transistor Memories

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Cover of 'Ferroelectric-Gate Field Effect Transistor Memories'

Table of Contents

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    Book Overview
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    Chapter 1 Features, Principles and Development of Ferroelectric–Gate Field-Effect Transistors
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    Chapter 2 Development of High-Endurance and Long-Retention FeFETs of Pt/Cay Sr1−y Bi2Ta2O9/(HfO2)x (Al2O3)1−x /Si Gate Stacks
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    Chapter 3 Nonvolatile Field-Effect Transistors Using Ferroelectric Doped HfO2 Films
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    Chapter 4 Oxide-Channel Ferroelectric-Gate Thin Film Transistors with Nonvolatile Memory Function
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    Chapter 5 ZnO/Pb(Zr,Ti)O3 Gate Structure Ferroelectric FETs
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    Chapter 6 Novel Ferroelectric-Gate Field-Effect Thin Film Transistors (FeTFTs): Controlled Polarization-Type FeTFTs
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    Chapter 7 Non-volatile Ferroelectric Memory Transistors Using PVDF and P(VDF-TrFE) Thin Films
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    Chapter 8 Poly(Vinylidenefluoride-Trifluoroethylene) P(VDF-TrFE)/Semiconductor Structure Ferroelectric-Gate FETs
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    Chapter 9 P(VDF-TeFE)/Organic Semiconductor Structure Ferroelectric-Gate FETs
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    Chapter 10 Nonvolatile Ferroelectric Memory Thin-Film Transistors Using a Poly(Vinylidene Fluoride Trifluoroethylene) Gate Insulator and an Oxide Semiconductor Active Channel
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    Chapter 11 Mechanically Flexible Non-volatile Field Effect Transistor Memories with Ferroelectric Polymers
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    Chapter 12 Non-volatile Paper Transistors with Poly(vinylidene fluoride-trifluoroethylene) Thin Film Using a Solution Processing Method
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    Chapter 13 Novel Application of FeFETs to NAND Flash Memory Circuits
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    Chapter 14 Novel Applications of Antiferroelectrics and Relaxor Ferroelectrics: A Material’s Point of View
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    Chapter 15 Adaptive-Learning Synaptic Devices Using Ferroelectric-Gate Field-Effect Transistors for Neuromorphic Applications
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    Chapter 16 Applications of Oxide Channel Ferroelectric-Gate Thin Film Transistors
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Title
Ferroelectric-Gate Field Effect Transistor Memories
Published by
Springer Netherlands, January 2016
DOI 10.1007/978-94-024-0841-6
ISBNs
978-9-40-240839-3, 978-9-40-240841-6
Editors

Byung-Eun Park, Hiroshi Ishiwara, Masanori Okuyama, Shigeki Sakai, Sung-Min Yoon

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Mendeley readers

Mendeley readers

The data shown below were compiled from readership statistics for 43 Mendeley readers of this research output. Click here to see the associated Mendeley record.

Geographical breakdown

Country Count As %
Unknown 43 100%

Demographic breakdown

Readers by professional status Count As %
Student > Ph. D. Student 17 40%
Researcher 6 14%
Student > Master 5 12%
Student > Doctoral Student 2 5%
Unspecified 1 2%
Other 1 2%
Unknown 11 26%
Readers by discipline Count As %
Materials Science 12 28%
Engineering 11 26%
Physics and Astronomy 3 7%
Unspecified 1 2%
Chemistry 1 2%
Other 1 2%
Unknown 14 33%