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High Open‐Circuit Voltages in Tin‐Rich Low‐Bandgap Perovskite‐Based Planar Heterojunction Photovoltaics

Overview of attention for article published in Advanced Materials, November 2016
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Title
High Open‐Circuit Voltages in Tin‐Rich Low‐Bandgap Perovskite‐Based Planar Heterojunction Photovoltaics
Published in
Advanced Materials, November 2016
DOI 10.1002/adma.201604744
Pubmed ID
Authors

Baodan Zhao, Mojtaba Abdi‐Jalebi, Maxim Tabachnyk, Hugh Glass, Varun S. Kamboj, Wanyi Nie, Andrew J. Pearson, Yuttapoom Puttisong, Karl C. Gödel, Harvey E. Beere, David A. Ritchie, Aditya D. Mohite, Siân E. Dutton, Richard H. Friend, Aditya Sadhanala

Abstract

Low-bandgap CH3 NH3 (Pbx Sn1-x )I3 (0 ≤ x ≤ 1) hybrid perovskites (e.g., ≈1.5-1.1 eV) demonstrating high surface coverage and superior optoelectronic properties are fabricated. State-of-the-art photovoltaic (PV) performance is reported with power conversion efficiencies approaching 10% in planar heterojunction architecture with small (<450 meV) energy loss compared to the bandgap and high (>100 cm(2) V(-1) s(-1) ) intrinsic carrier mobilities.

Mendeley readers

Mendeley readers

The data shown below were compiled from readership statistics for 290 Mendeley readers of this research output. Click here to see the associated Mendeley record.

Geographical breakdown

Country Count As %
Korea, Republic of 1 <1%
Unknown 289 100%

Demographic breakdown

Readers by professional status Count As %
Student > Ph. D. Student 81 28%
Researcher 45 16%
Student > Master 31 11%
Student > Bachelor 19 7%
Student > Doctoral Student 12 4%
Other 32 11%
Unknown 70 24%
Readers by discipline Count As %
Materials Science 66 23%
Physics and Astronomy 49 17%
Chemistry 40 14%
Engineering 23 8%
Energy 19 7%
Other 8 3%
Unknown 85 29%