Title |
Noninvasive Spatial Metrology of Single-Atom Devices
|
---|---|
Published in |
Nano Letters, April 2013
|
DOI | 10.1021/nl303863s |
Pubmed ID | |
Authors |
Fahd A. Mohiyaddin, Rajib Rahman, Rachpon Kalra, Gerhard Klimeck, Lloyd C. L. Hollenberg, Jarryd J. Pla, Andrew S. Dzurak, Andrea Morello |
Abstract |
The exact location of a single dopant atom in a nanostructure can influence or fully determine the functionality of highly scaled transistors or spin-based devices. We demonstrate here a noninvasive spatial metrology technique, based on the microscopic modeling of three electrical measurements on a single-atom (phosphorus in silicon) spin qubit device: hyperfine coupling, ground state energy, and capacitive coupling to nearby gates. This technique allows us to locate the qubit atom with a precision of ±2.5 nm in two directions and ±15 nm in the third direction, which represents a 1500-fold improvement with respect to the prefabrication statistics obtainable from the ion implantation parameters. |
Mendeley readers
Geographical breakdown
Country | Count | As % |
---|---|---|
United States | 3 | 4% |
United Kingdom | 1 | 1% |
Poland | 1 | 1% |
Unknown | 66 | 93% |
Demographic breakdown
Readers by professional status | Count | As % |
---|---|---|
Student > Ph. D. Student | 27 | 38% |
Researcher | 12 | 17% |
Student > Master | 8 | 11% |
Student > Doctoral Student | 5 | 7% |
Student > Bachelor | 4 | 6% |
Other | 9 | 13% |
Unknown | 6 | 8% |
Readers by discipline | Count | As % |
---|---|---|
Physics and Astronomy | 42 | 59% |
Engineering | 10 | 14% |
Materials Science | 7 | 10% |
Computer Science | 1 | 1% |
Chemistry | 1 | 1% |
Other | 3 | 4% |
Unknown | 7 | 10% |