Title |
Phase Space for the Breakdown of the Quantum Hall Effect in Epitaxial Graphene
|
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Published in |
Physical Review Letters, August 2013
|
DOI | 10.1103/physrevlett.111.096601 |
Pubmed ID | |
Authors |
J. A. Alexander-Webber, A. M. R. Baker, T. J. B. M. Janssen, A. Tzalenchuk, S. Lara-Avila, S. Kubatkin, R. Yakimova, B. A. Piot, D. K. Maude, R. J. Nicholas |
Abstract |
We report the phase space defined by the quantum Hall effect breakdown in polymer gated epitaxial graphene on SiC (SiC/G) as a function of temperature, current, carrier density, and magnetic fields up to 30 T. At 2 K, breakdown currents (I(c)) almost 2 orders of magnitude greater than in GaAs devices are observed. The phase boundary of the dissipationless state (ρ(xx)=0) shows a [1-(T/T(c))2] dependence and persists up to T(c)>45 K at 29 T. With magnetic field I(c) was found to increase ∝B(3/2) and T(c)∝B2. As the Fermi energy pproaches the Dirac point, the ν=2 quantized Hall plateau appears continuously from fields as low as 1 T up to at least 19 T due to a strong magnetic field dependence of the carrier density. |
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