Title |
A silicon carbide room-temperature single-photon source
|
---|---|
Published in |
Nature Materials, November 2013
|
DOI | 10.1038/nmat3806 |
Pubmed ID | |
Authors |
S. Castelletto, B. C. Johnson, V. Ivády, N. Stavrias, T. Umeda, A. Gali, T. Ohshima |
Abstract |
Over the past few years, single-photon generation has been realized in numerous systems: single molecules, quantum dots, diamond colour centres and others. The generation and detection of single photons play a central role in the experimental foundation of quantum mechanics and measurement theory. An efficient and high-quality single-photon source is needed to implement quantum key distribution, quantum repeaters and photonic quantum information processing. Here we report the identification and formation of ultrabright, room-temperature, photostable single-photon sources in a device-friendly material, silicon carbide (SiC). The source is composed of an intrinsic defect, known as the carbon antisite-vacancy pair, created by carefully optimized electron irradiation and annealing of ultrapure SiC. An extreme brightness (2×10(6) counts s(-1)) resulting from polarization rules and a high quantum efficiency is obtained in the bulk without resorting to the use of a cavity or plasmonic structure. This may benefit future integrated quantum photonic devices. |
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Demographic breakdown
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Mendeley readers
Geographical breakdown
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Sweden | 1 | <1% |
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Professor > Associate Professor | 19 | 4% |
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