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Fabrication of Ordered, Large Scale, Horizontally‐Aligned Si Nanowire Arrays Based on an In Situ Hard Mask Block Copolymer Approach

Overview of attention for article published in Advanced Materials, November 2013
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Title
Fabrication of Ordered, Large Scale, Horizontally‐Aligned Si Nanowire Arrays Based on an In Situ Hard Mask Block Copolymer Approach
Published in
Advanced Materials, November 2013
DOI 10.1002/adma.201304096
Pubmed ID
Authors

Tandra Ghoshal, Ramsankar Senthamaraikannan, Matthew T. Shaw, Justin D. Holmes, Michael A. Morris

Abstract

A simple technique is demonstrated to fabricate horizontal, uniform, and hexagonally arranged Sinanowire arrays with controlled orientation and density at spatially well defined locations on a substrate based on an in situ hard-mask pattern-formation approach by microphase-separated block-copolymer thin films. The technique may have significant application in the manufacture of transistor circuitry.

Mendeley readers

Mendeley readers

The data shown below were compiled from readership statistics for 43 Mendeley readers of this research output. Click here to see the associated Mendeley record.

Geographical breakdown

Country Count As %
Korea, Republic of 1 2%
India 1 2%
Unknown 41 95%

Demographic breakdown

Readers by professional status Count As %
Student > Ph. D. Student 12 28%
Researcher 11 26%
Student > Master 4 9%
Student > Doctoral Student 3 7%
Student > Bachelor 2 5%
Other 8 19%
Unknown 3 7%
Readers by discipline Count As %
Materials Science 14 33%
Chemistry 13 30%
Engineering 5 12%
Physics and Astronomy 4 9%
Environmental Science 2 5%
Other 3 7%
Unknown 2 5%