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All Solution‐Processed, Hybrid Light Emitting Field‐Effect Transistors

Overview of attention for article published in Advanced Materials, June 2014
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Title
All Solution‐Processed, Hybrid Light Emitting Field‐Effect Transistors
Published in
Advanced Materials, June 2014
DOI 10.1002/adma.201400938
Pubmed ID
Authors

Khalid Muhieddine, Mujeeb Ullah, Bhola N. Pal, Paul Burn, Ebinazar B. Namdas

Abstract

All solution-processed, high performance hybrid light emitting transistors (HLETs) are realized. Using a novel combination of device architecture and materials a bilayer device comprised of an inorganic and organic semiconducting layer is fabricated and the optoelectronic properties are presented.

Mendeley readers

Mendeley readers

The data shown below were compiled from readership statistics for 89 Mendeley readers of this research output. Click here to see the associated Mendeley record.

Geographical breakdown

Country Count As %
United Kingdom 1 1%
Germany 1 1%
Austria 1 1%
Unknown 86 97%

Demographic breakdown

Readers by professional status Count As %
Student > Ph. D. Student 31 35%
Researcher 16 18%
Student > Master 14 16%
Student > Bachelor 5 6%
Lecturer 4 4%
Other 8 9%
Unknown 11 12%
Readers by discipline Count As %
Materials Science 29 33%
Engineering 18 20%
Physics and Astronomy 13 15%
Chemistry 12 13%
Energy 1 1%
Other 0 0%
Unknown 16 18%