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The Physics and Chemistry of SiO2 and the Si-SiO2 Interface 2

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Table of Contents

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    Book Overview
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    Chapter 1 Silicon Oxides and Oxidation
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    Chapter 2 Use of <Superscript>18</Superscript>O Labelling to Study Growth Mechanisms in Dry Oxidation of Silicon
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    Chapter 3 Strain Dependent Diffusion During Dry Thermal Oxidation of Crystalline Si
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    Chapter 4 Oxidation of Silicon in Oxygen: Measurement of Film Thickness and Kinetics
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    Chapter 5 Modeling Process-Dependent Thermal Silicon Dioxide (SiO 2 ) Films on Silicon
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    Chapter 6 New Approach to Chemically Enhanced Oxidation — A Review
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    Chapter 7 Kinetics of Oxidation of Silicon by Electron Cyclotron Resonance Plasmas
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    Chapter 8 Mechanisms of Oxidation Rate Enhancement in Negative-Point Oxygen Corona Discharge Processing of SiO 2 Films on Si
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    Chapter 9 High Pressure Oxidation for Low Temperature Passivation of Si 1-x Ge x Alloys
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    Chapter 10 A New Ellipsometry Technique for Interface Analysis: Application to Si-SiO 2
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    Chapter 11 Observation of Thin SiO 2 Films Using IR-RAS
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    Chapter 12 Deconvolution of Thickness-Averaged Structural and Optical Properties of Thermally Grown and Rpecvd SiO 2 Films
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    Chapter 13 Tem Investigations of the Oxidation Kinetics of Amorphous Silicon Films
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    Chapter 14 Thermal and X-Ray Production of Point Defects in Vitreous SiO 2
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    Chapter 15 A Review of the EPR Spectroscopy of the Point Defects in α-Quartz: The Decade 1982–1992
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    Chapter 16 Formation of Si/SiO 2 Heterostructures by Low-Temperature, Plasma-Assisted Oxidation and Deposition Processes
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    Chapter 17 Comparison of SiO 2 Thin Film Properties Deposited by Distributed Electron Cyclotron Resonance Plasma Using Two Different Oxidant Gases: N 2 O or O 2
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    Chapter 18 Low Temperature Synthesis and Characterization of Silicon Dioxide Films
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    Chapter 19 Native Oxide Growth and Hydrogen Bonding Features on Chemically Cleaned Silicon Surfaces
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    Chapter 20 Understanding the Surface Chemical and Structural Implications of HF Solution Cleaning of Silicon
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    Chapter 21 Pre-Gate Oxide Si Surface Control
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    Chapter 22 Chemical Structures of Native Oxides Formed During Wet Chemical Treatments on NH 4 F Treated Si(111) Surfaces
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    Chapter 23 Silicon Surface Analysis and Very Thin Silicon Oxide Characterization after HF/Ethanol Preoxidation Silicon Cleaning
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    Chapter 24 Effects of Metallic Impurities upon thin Gate Oxide Integrity and Related Bulk Properties in CZ Si
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    Chapter 25 Local Bonding at SiO 2 /Si Interfaces
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    Chapter 26 High-Resolution Transmission Electron Microscope Image of the SiO 2 /(001)Si Interface
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    Chapter 27 Dependence of Surface Microroughness on Types of Silicon Substrates
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    Chapter 28 The Effect of Surface Roughness on Gate Oxide Leakage Currents
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    Chapter 29 A Double Sacrificial Oxide Process for Smoother 150 Å SiO 2 Gate Oxide Interfaces
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    Chapter 30 Effect of Solidification Induced Defects in CZ- Silicon Upon Thin Gate Oxide Integrity
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    Chapter 31 Effects of D-Defects in CZ Silicon Upon Thin Gate Oxide Integrity
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    Chapter 32 Oxidation Induced Changes in the Si Surface Microroughness
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    Chapter 33 Properties of Simox and Related Systems
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    Chapter 34 Reoxidized Nitrided Oxide Gate Dielectrics for Advanced CMOS
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    Chapter 35 Interface Properties and Device Reliability of High Quality PECVD Oxide for MOS Applications
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    Chapter 36 Charge Trapping in an Oxide-Nitride-Oxide Gate Dielectric
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    Chapter 37 Interface Trap Density Reduction and Oxide Profiling for Mos Capacitors with Fluorinated Gate Oxide Dielectrics
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    Chapter 38 Physics of Extreme Quantum Confinement Exemplified by Si/SiO 2 System
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    Chapter 39 The Integrity of Very Thin Silicon Films Deposited on SIO 2
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    Chapter 40 Researches of SiO 2 on InP and GaAs Mos Structures
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    Chapter 41 Generation of Random Telegraph Noise by Single Si/SiO 2 Interfacial Defects
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    Chapter 42 Single Electron Transfer from the Channel of a Sub- μ m Mosfet to an Individual Interface Trap
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    Chapter 43 Defect Structure and Generation Mechanisms at the Si/SiO<Subscript>2</Subscript> Interface
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    Chapter 44 The Influence of Crystal Orientation and Processing Conditions on the Energy Distribution of Traps at the Si-SiO 2 Interface
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    Chapter 45 Charge Trapping and Defect Generation in Thermal Oxide Layers
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    Chapter 46 Optically Induced Nitrogen Dangling Bonds in Amorphous Hydrogenated Silicon Nitride Thin Films
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    Chapter 47 Impact Ionization and Degradation in Silicon Dioxide Films on Silicon
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    Chapter 48 Hot-Electron Dynamics in Thin Silicon Dioxide Films Studied by Photon-Induced Electron Transmission
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    Chapter 49 Constant Current Stress Breakdown in Ultrathin SiO 2 Films
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    Chapter 50 The Role of Hydrogen in Interface Trap Creation by Radiation in Mos Devices-A Review
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    Chapter 51 Hydrogen-Related E’ Centers and Positive Charge in Irradiated Oxide Films
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    Chapter 52 Removal of Traps in Process-Damaged MOS Structures by Room-Temperature Hydrogenation
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    Chapter 53 Hot-Electron Induced Hydrogen Redistribution in SiO 2
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    Chapter 54 Effects of Introducing H 2 Into Irradiated Mosfet’s from Room Temperature to 250°C
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Title
The Physics and Chemistry of SiO2 and the Si-SiO2 Interface 2
Published by
Springer US, September 1993
DOI 10.1007/978-1-4899-1588-7
ISBNs
978-0-306-44419-7, 978-1-4899-1588-7, 978-1-4899-1590-0
Editors

B.E. Deal, C.R. Helms

Mendeley readers

Mendeley readers

The data shown below were compiled from readership statistics for 25 Mendeley readers of this research output. Click here to see the associated Mendeley record.

Geographical breakdown

Country Count As %
Unknown 25 100%

Demographic breakdown

Readers by professional status Count As %
Student > Ph. D. Student 9 36%
Student > Master 5 20%
Researcher 4 16%
Student > Bachelor 1 4%
Student > Doctoral Student 1 4%
Other 1 4%
Unknown 4 16%
Readers by discipline Count As %
Physics and Astronomy 7 28%
Engineering 4 16%
Chemistry 3 12%
Materials Science 3 12%
Decision Sciences 1 4%
Other 1 4%
Unknown 6 24%