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The Physics and Chemistry of SiO2 and the Si-SiO2 Interface

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Table of Contents

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    Book Overview
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    Chapter 1 Historical Perspectives of Silicon Oxidation
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    Chapter 2 Oxidation of Silicon: Tests of Mechanisms
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    Chapter 3 Silicon Oxidation Models Based on Parallel Mechanisms
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    Chapter 4 The Role of SiO in Si Oxidation at a Si-SiO 2 Interface
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    Chapter 5 Uncertainty Analysis of Analytic Oxidation Models
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    Chapter 6 Modeling of the Oxide Growth in a Chlorine Ambient
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    Chapter 7 Silicon Oxidation Studies: A Review of Recent Studies on Thin Film Silicon Dioxide Formation
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    Chapter 8 Si Oxidation Mechanisms as Studied by Oxygen Tracer Methods
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    Chapter 9 The Oxidation of Silicides on Silicon
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    Chapter 10 Oxidation Kinetics of Si in Dry CO 2
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    Chapter 11 A Novel Silicon Oxidation Method — HF Enhanced Oxidation
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    Chapter 12 Thermal Oxidation of Silicon in an Afterglow Gas
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    Chapter 13 Deposition of SiO 2 Thin Films by Remote Plasma Enhanced Chemical Vapor Deposition (Remote PECVD)
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    Chapter 14 Anodic SiO 2 for Low Temperature Gate Dielectrics
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    Chapter 15 Local Atomic Structure of Thermally Grown SiO<Subscript>2</Subscript> Films
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    Chapter 16 Structural Relaxation and Growth of SiO<Subscript>2</Subscript> Films on Si
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    Chapter 17 Structural Relaxation Effects in Dry Thermal Silicon Dioxide Films on Silicon
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    Chapter 18 Molecular Diffusion in a-SiO 2 : Its Role in Annealing Radiation-Induced Defect Centers
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    Chapter 19 Current-Induced Charges and Hydrogen Species Distributions in MOS Silicon Dioxide Films
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    Chapter 20 The Structure of the Si / SiO 2 Interface: A Review
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    Chapter 21 The Stoichiometry and Structure of the Si/SiO 2 Interface: Ion Scattering Studies
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    Chapter 22 Scanning Tunneling Microscopy and Spectroscopy of Silicon Dangling Bond Defects
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    Chapter 23 The Microstructure of SiO<Subscript>2</Subscript>-Si(100) Interfaces Investigated by XPS and HRTEM
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    Chapter 24 Microscopic Structure Of The SiO 2 /Si Interface
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    Chapter 25 ARXPS Analysis of Si-SiO 2 -Interfaces
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    Chapter 26 Dependence of SiO 2 /Si Interface Structures on Oxidation Process
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    Chapter 27 The Effect of Electrostatic Screening on Energy Positions of Spectra Near SiO 2 /Si Interfaces
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    Chapter 28 A Physical Model for the Observed Dependence of the Metal-Semiconductor Work Function Difference on Substrate Orientation
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    Chapter 29 Theoretical Calculations of the Electronic Structure in the Si-SiO 2 Systems
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    Chapter 30 Theory of Defects in the MOS System
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    Chapter 31 Nature of Radiation-Induced Point Defects in Amorphous SiO 2 and their Role in SiO 2 -ON-Si Structures
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    Chapter 32 Chemical and Structural Features of Inherent and Process-Induced Defects in Oxidized Silicon
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    Chapter 33 Chemical Kinetics of Hydrogen and P<Subscript>b</Subscript> Centers
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    Chapter 34 Electronic and Optical Properties of Silicon Dangling-Bond Defects at the Si-Sio 2 Interface
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    Chapter 35 Transient Spectroscopy on Individual Interface Traps in Mosfets
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    Chapter 36 Observation of “1/f-Noise States” in Conductance Measurements on Mos Structures
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    Chapter 37 The Gate-Voltage Dependence of Trapping Into Individual Si:SiO 2 Interface States
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    Chapter 38 Step Heights of Switching Effects of Single Interface Traps in Mosfets
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    Chapter 39 Low Temperature Conductance of Si-MOS Devices after Hot Carrier Degradation
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    Chapter 40 The Neutral Level of Si-SO 2 Interface States
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    Chapter 41 Mos Tunneling Rate and Interface State Capture Cross-Section
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    Chapter 42 Defect Transformation Process at SiO<Subscript>2</Subscript>/Si Interfaces
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    Chapter 43 Preoxidation Surface Treatments in Thermal Oxidation of Silicon
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    Chapter 44 The Si-SiO 2 Interface Roughness: Causes and Effects
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    Chapter 45 Defects and Impurities in SiO 2 Interface for Oxides Prepared Using Superclean Methods
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    Chapter 46 The Effect of Chemical Cleaning on the Kinetics of Thermal Oxidation
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    Chapter 47 Studies of Anhydrous HF Preoxidation Treatment of Silicon Surfaces
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    Chapter 48 The Influence of the Si-Substrate Characteristics on the Quality of Poly-Si and Al Gated Mos Oxides
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    Chapter 49 Dielectric Breakdown of SiO 2 Grown on Rough Si Surfaces
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    Chapter 50 Effects of Deionized Water Rinses on Gate Oxide Leakage Currents
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    Chapter 51 Oxidation-Induced Defects and Effects in Silicon During Low Thermal-Budget Processing
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    Chapter 52 Implications of Oxidation Models on the Point Defect Behavior in the Silicon Substrate
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    Chapter 53 Interstitial Fluxes During Silicon Oxidation
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    Chapter 54 Charge Trapping in SiO 2
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    Chapter 55 Historical Perspective on Tunneling in SiO 2
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    Chapter 56 Hot Electron Transport in Silicon Dioxide
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    Chapter 57 Ion Implantation and Ionizing Radiation Effects in Thermal Oxides
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    Chapter 58 Interface and Bulk Trapping Centers in Low Temperature Ion-Beam Sputtered Silicon Dioxide Films
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    Chapter 59 Interface Improvement by Hot Carrier Degradation — Forming Gas Annealing Cycle
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    Chapter 60 Effects if X Irradiation and High Field Electron Injection on the Properties of Rapid Thermal Oxides
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Title
The Physics and Chemistry of SiO2 and the Si-SiO2 Interface
Published by
Springer US, January 1988
DOI 10.1007/978-1-4899-0774-5
ISBNs
978-1-4899-0774-5, 978-0-306-43032-9, 978-1-4899-0776-9
Editors

B.E. Deal, C.R. Helms

Mendeley readers

Mendeley readers

The data shown below were compiled from readership statistics for 40 Mendeley readers of this research output. Click here to see the associated Mendeley record.

Geographical breakdown

Country Count As %
Russia 1 3%
Germany 1 3%
Unknown 38 95%

Demographic breakdown

Readers by professional status Count As %
Student > Ph. D. Student 17 43%
Researcher 6 15%
Student > Master 5 13%
Student > Bachelor 2 5%
Unknown 10 25%
Readers by discipline Count As %
Physics and Astronomy 15 38%
Materials Science 7 18%
Chemistry 5 13%
Engineering 2 5%
Medicine and Dentistry 1 3%
Other 0 0%
Unknown 10 25%