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Energy Level Alignment of N‑Doping Fullerenes and Fullerene Derivatives Using Air-Stable Dopant

Overview of attention for article published in ACS Applied Materials & Interfaces, September 2017
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Title
Energy Level Alignment of N‑Doping Fullerenes and Fullerene Derivatives Using Air-Stable Dopant
Published in
ACS Applied Materials & Interfaces, September 2017
DOI 10.1021/acsami.7b11768
Pubmed ID
Authors

Qinye Bao, Xianjie Liu, Slawomir Braun, Yanqing Li, Jianxin Tang, Chungang Duan, Mats Fahlman

Abstract

Doping has been proved to be one of the powerful technologies to achieve significant improvement in organic electronic device performance. Herein, we systematically map out the interface properties of solution processed air stable n-type 4-(1,3-dimethyl-2,3-dihydro-1H-benzoimidazol-2-yl)phenyl (DMBI) doping fullerenes and fullerene derivatives, and establish an universal energy level alignment scheme for this class of n-doped system. At low doping levels where the charge transfer doping induces mainly bound charges, the energy level alignment of the n-doping organic semiconductor can be described by combining integer charger transfer (ICT)-induced shifts with a so-called double dipole step. At high doping levels significant density of free charges are generated and charge flows between the organic film and the conducting electrodes equilibrating the Fermi level in a classic "depletion layer" scheme. Moreover, we demonstrate that the model holds for both n and p-doping of π-backbone molecules and polymers. With the results, we provide the wide guidance for identifying application of current organic n-type doping technology in organic electronics.

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Mendeley readers

Mendeley readers

The data shown below were compiled from readership statistics for 26 Mendeley readers of this research output. Click here to see the associated Mendeley record.

Geographical breakdown

Country Count As %
Unknown 26 100%

Demographic breakdown

Readers by professional status Count As %
Other 9 35%
Student > Ph. D. Student 5 19%
Student > Doctoral Student 3 12%
Student > Master 1 4%
Researcher 1 4%
Other 1 4%
Unknown 6 23%
Readers by discipline Count As %
Physics and Astronomy 10 38%
Materials Science 4 15%
Chemistry 2 8%
Energy 1 4%
Engineering 1 4%
Other 0 0%
Unknown 8 31%
Attention Score in Context

Attention Score in Context

This research output has an Altmetric Attention Score of 1. This is our high-level measure of the quality and quantity of online attention that it has received. This Attention Score, as well as the ranking and number of research outputs shown below, was calculated when the research output was last mentioned on 21 September 2017.
All research outputs
#18,572,036
of 23,002,898 outputs
Outputs from ACS Applied Materials & Interfaces
#11,943
of 17,546 outputs
Outputs of similar age
#245,943
of 320,989 outputs
Outputs of similar age from ACS Applied Materials & Interfaces
#296
of 419 outputs
Altmetric has tracked 23,002,898 research outputs across all sources so far. This one is in the 11th percentile – i.e., 11% of other outputs scored the same or lower than it.
So far Altmetric has tracked 17,546 research outputs from this source. They typically receive a little more attention than average, with a mean Attention Score of 5.7. This one is in the 19th percentile – i.e., 19% of its peers scored the same or lower than it.
Older research outputs will score higher simply because they've had more time to accumulate mentions. To account for age we can compare this Altmetric Attention Score to the 320,989 tracked outputs that were published within six weeks on either side of this one in any source. This one is in the 12th percentile – i.e., 12% of its contemporaries scored the same or lower than it.
We're also able to compare this research output to 419 others from the same source and published within six weeks on either side of this one. This one is in the 15th percentile – i.e., 15% of its contemporaries scored the same or lower than it.