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Access resistance reduction in Ge nanowires and substrates based on non-destructive gas-source dopant in-diffusion

Overview of attention for article published in Journal of Materials Chemistry C: Materials for optical and electronic devices, October 2014
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Title
Access resistance reduction in Ge nanowires and substrates based on non-destructive gas-source dopant in-diffusion
Published in
Journal of Materials Chemistry C: Materials for optical and electronic devices, October 2014
DOI 10.1039/c4tc02018a
Authors

Ray Duffy, Maryam Shayesteh, Kevin Thomas, Emanuele Pelucchi, Ran Yu, Anushka Gangnaik, Yordan M. Georgiev, Patrick Carolan, Nikolay Petkov, Brenda Long, Justin D. Holmes

Mendeley readers

Mendeley readers

The data shown below were compiled from readership statistics for 20 Mendeley readers of this research output. Click here to see the associated Mendeley record.

Geographical breakdown

Country Count As %
Ireland 1 5%
Unknown 19 95%

Demographic breakdown

Readers by professional status Count As %
Student > Ph. D. Student 7 35%
Professor 2 10%
Other 2 10%
Researcher 2 10%
Professor > Associate Professor 2 10%
Other 4 20%
Unknown 1 5%
Readers by discipline Count As %
Chemistry 6 30%
Materials Science 5 25%
Physics and Astronomy 3 15%
Engineering 2 10%
Unknown 4 20%