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Two-dimensional modeling of subthreshold current and subthreshold swing of double-material-gate (DMG) strained-Si (s-Si) on SGOI MOSFETs

Overview of attention for article published in Journal of Computational Electronics, February 2013
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Title
Two-dimensional modeling of subthreshold current and subthreshold swing of double-material-gate (DMG) strained-Si (s-Si) on SGOI MOSFETs
Published in
Journal of Computational Electronics, February 2013
DOI 10.1007/s10825-013-0442-2
Authors

Mirgender Kumar, Sarvesh Dubey, Pramod Kumar Tiwari, S. Jit

Mendeley readers

Mendeley readers

The data shown below were compiled from readership statistics for 15 Mendeley readers of this research output. Click here to see the associated Mendeley record.

Geographical breakdown

Country Count As %
Unknown 15 100%

Demographic breakdown

Readers by professional status Count As %
Student > Ph. D. Student 6 40%
Researcher 2 13%
Professor 2 13%
Lecturer 1 7%
Student > Master 1 7%
Other 1 7%
Unknown 2 13%
Readers by discipline Count As %
Engineering 9 60%
Physics and Astronomy 1 7%
Materials Science 1 7%
Design 1 7%
Unknown 3 20%