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Charge Trapping by Self‐Assembled Monolayers as the Origin of the Threshold Voltage Shift in Organic Field‐Effect Transistors

Overview of attention for article published in Small, November 2011
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Title
Charge Trapping by Self‐Assembled Monolayers as the Origin of the Threshold Voltage Shift in Organic Field‐Effect Transistors
Published in
Small, November 2011
DOI 10.1002/smll.201101467
Pubmed ID
Authors

Fatemeh Gholamrezaie, Anne‐Marije Andringa, W. S. Christian Roelofs, Alfred Neuhold, Martijn Kemerink, Paul W. M. Blom, Dago M. de Leeuw

Abstract

The threshold voltage is an important property of organic field-effect transistors. By applying a self-assembled monolayer (SAM) on the gate dielectric, the value can be tuned. After electrical characterization, the semiconductor is delaminated. The surface potentials of the revealed SAM perfectly agree with the threshold voltages, which demonstrate that the shift is not due to the dipolar contribution, but due to charge trapping by the SAM.

Mendeley readers

Mendeley readers

The data shown below were compiled from readership statistics for 87 Mendeley readers of this research output. Click here to see the associated Mendeley record.

Geographical breakdown

Country Count As %
United States 2 2%
Japan 2 2%
Canada 1 1%
Germany 1 1%
Italy 1 1%
Spain 1 1%
Unknown 79 91%

Demographic breakdown

Readers by professional status Count As %
Student > Ph. D. Student 23 26%
Researcher 18 21%
Student > Master 14 16%
Professor > Associate Professor 8 9%
Student > Bachelor 4 5%
Other 9 10%
Unknown 11 13%
Readers by discipline Count As %
Materials Science 18 21%
Engineering 17 20%
Physics and Astronomy 17 20%
Chemistry 12 14%
Chemical Engineering 4 5%
Other 5 6%
Unknown 14 16%