Title |
Ultra-High-Density Arrays of Defect-Free AlN Nanorods: A “Space-Filling” Approach
|
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Published in |
ACS Nano, January 2016
|
DOI | 10.1021/acsnano.5b06062 |
Pubmed ID | |
Authors |
Michele Conroy, Vitaly Z. Zubialevich, Haoning Li, Nikolay Petkov, Sally O’Donoghue, Justin D. Holmes, Peter J. Parbrook |
Abstract |
Nanostructured semiconductors have a clear potential for improved optoelectronic devices, such as high efficiency light emitting diodes (LEDs). However most arrays of semiconductor nanorods suffer from having relatively low densities (or "fill factors") and a high degree of non-uniformity, especially when produced by self-organized growth. Ideally an array of nanorods for an optoelectronic emitter should have a fill factor close to 100 %, with uniform rod diameter and height. In this article we present a 'space-filling' approach for forming defect-free arrays of AlN nanorods, whereby the separation between each rod can be controlled to 5 nm due to a self-limiting process. These arrays of pyramidal topped AlN nanorods formed over wafer-scale areas by metal organic chemical vapour deposition (MOCVD), provide a defect free semi-polar top surface, for potential optoelectronic device applications with the highest reported fill factor at 98%. |
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