Local Oxidation Fin-Field-Effect-Transistor Structure for Nanodevice Applications

Overview of attention for article published in Japanese Journal of Applied Physics, April 2010

Altmetric Badge

About this Attention Score

Good Attention Score compared to outputs of the same age (70th percentile)
High Attention Score compared to outputs of the same age and source (80th percentile)

Mentioned by

patent: 3 patents

Readers on

mendeley: 1 Mendeley

So far, Altmetric has seen 3 patents that reference this research output.

Semiconductor fins on a trench isolation region in a bulk semiconductor substrate and a…

Grant US-9224841-B2

United States of America

Preparation method of fin-type field effect transistor

Grant CN-102651320-B

China

Preparation method of fin-type field effect transistor

Application CN-102651320-A

China

This page shows the most recent patents that mention this research output. Click here to find out how to access more activity.