A Resilient and Power-Efficient Automatic-Power-Down Sense Amplifier for SRAM Design

Overview of attention for article published in IEEE Transactions on Circuits and Systems II: Express Briefs, October 2008

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Circuit for improving linearity and consistency of calculation in memory

Grant CN-112071344-B

China

Circuit for improving linearity and consistency of calculation in memory

Application CN-112071344-A

China

Read signal control circuit applied to static random access memory

Grant CN-106875972-B

China

Read signal control circuit applied to static random access memory

Application CN-106875972-A

China

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