Diffusion and activation of ultrashallow B implants in silicon on insulator: End-of-range defect dissolution and the buried Si∕SiO2 interface

Overview of attention for article published in Applied Physics Letters, July 2006

Altmetric Badge

Mentioned by

patent: 1 patent

Readers on

mendeley: 17 Mendeley

So far, Altmetric has seen 1 patent that references this research output.

METHOD OF CREATING SHALLOWLY-LYING NANOSIZED ALLOYED LAYERS IN SILICON

N/A RU-2523732-C1

Russian Federation

This page shows the most recent patents that mention this research output. Click here to find out how to access more activity.