Reduction of dark current and unintentional background doping in InGaAsN photodetectors by ex situ annealing

Overview of attention for article published in Proceedings of SPIE, May 2010

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So far, Altmetric has seen 8 patents that reference this research output.

Short wavelength infrared optoelectronic devices having a dilute nitride layer

Grant US-11271122-B2

United States of America

08 Mar 2022

Monolithic multijunction power converter

Grant US-11233166-B2

United States of America

25 Jan 2022

Short wavelength infrared optoelectronic devices having graded or stepped dilute nitride…

Grant US-11211514-B2

United States of America

28 Dec 2021

Hybrid MOCVD/MBE epitaxial growth of high-efficiency lattice-matched multijunction solar…

Grant US-10930808-B2

United States of America

23 Feb 2021

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