Performance of Inversion, Accumulation, and Junctionless Mode n-Type and p-Type Bulk Silicon FinFETs With 3-nm Gate Length
Overview of attention for article published in IEEE Electron Device Letters, June 2015
Altmetric Badge
About this Attention Score
-
Above-average Attention Score compared to outputs of the same age (55th percentile)
Readers on
- mendeley
- 37 Mendeley