A Process Variation Tolerant Embedded Split-Gate Flash Memory Using Pre-Stable Current Sensing Scheme

Overview of attention for article published in IEEE Journal of Solid-State Circuits, March 2009

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Memory sector with post-trim reference current and method for improving memory read margin

Application CN-116469434-A

China

Anti-hacking mechanisms for flash memory device

Grant US-11188237-B2

United States of America

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