Lili Yu, Dina El-Damak, Ujwal Radhakrishna, Xi Ling, Ahmad Zubair, Yuxuan Lin, Yuhao Zhang, Meng-Hsi Chuang, Yi-Hsien Lee, Dimitri Antoniadis, Jing Kong, Anantha Chandrakasan, Tomas Palacios

Two-dimensional electronics based on single-layer (SL) MoS2 offers significant advantages for realizing large-scale flexible systems owing to its ultrathin nature, good transport properties and stable crystalline structure. In this work, we utilize a gate first process technology for the fabrication of highly uniform enhancement mode FETs, with large mobility and excellent subthreshold swing. To enable large-scale MoS2 circuit, we also develop Verilog-A compact models that accurately predict the performance of the fabricated MoS2 FETs as well as a parameterized layout cell for the FET to facilitate the design and layout process using computer aided design (CAD) tools. Using this CAD flow, we designed combinational logic gates and sequential circuits (AND, OR, NAND, NOR, XNOR, Latch, edge-triggered register), which were then fabricated using the proposed flow showing excellent performance. The fabricated integrated circuits constitute the basis of a standard cell digital library which is crucial for electronic circuit design using hardware description languages. The proposed design flow provides a platform for the co-optimization of the device fabrication technology and circuits design for future ubiquitous flexible and transparent electronics using two-dimensional materials.