1.3 μm InAsP multiquantum well laser diodes with the n-type modulation-doped InAsP/InP/InGaP active region

Overview of attention for article published in Journal of Vacuum Science & Technology: Part B, June 2002

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SILICON-PHOTONICS-BASED SEMICONDUCTOR OPTICAL AMPLIFIER WITH N-DOPED ACTIVE LAYER

Application EP-3972063-A1

European Patent Office

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