Vapor-phase epitaxial growth on porous 6H–SiC analyzed by Raman scattering

Overview of attention for article published in Applied Physics Letters, June 2000

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Method, structure, and apparatus for Raman spectroscopy

Grant US-7894056-B2

United States of America

Method, structure, and apparatus for Raman spectroscopy

Grant US-7599056-B2

United States of America

Method, structure, and apparatus for Raman spectroscopy

Grant US-7075642-B2

United States of America

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