A new reconfigurable field-effect transistor and memory device based on a 2D heterostructure
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Schematic illustration outlining the team's ReSe2/hBN stack device and the transistor–memory switch being triggered by light…
A reconfigurable transistor and memory based on a two-dimensional heterostructure and photoinduced trapping
Overview of attention for article published in Nature Electronics, September 2023
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In the top 25% of all research outputs scored by Altmetric
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High Attention Score compared to outputs of the same age (86th percentile)
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