Crystallization kinetics during layer exchange of 28Si implanted Al films for fabrication of quantum computers: A theoretical model

Overview of attention for article published in Journal of Vacuum Science & Technology: Part B, May 2024

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This #JVSTA paper describes a qualitative model of a novel implanted layer exchange enrichment process used to propose conditions for production of high quality 28Si layers for quantum computers https://t.co/zQeiaKaenV https://t.co/CnNEbTgRIq

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