3510-V 390-$\hbox{m}\Omega\cdot\hbox{cm}^{2}$ 4H-SiC Lateral JFET on a Semi-Insulating Substrate

Overview of attention for article published in IEEE Electron Device Letters, August 2009

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LATERAL SILICON CARBIDE JUNCTION GATE FIELD EFFECT TRANSISTOR DEVICE AND ITS…

Application EP-4510193-A1

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