Characterization of CdZnTe Crystals Grown Using a Seeded Modified Vertical Bridgman Method

Overview of attention for article published in IEEE Transactions on Nuclear Science, October 2009

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In the top 25% of all research outputs scored by Altmetric
High Attention Score compared to outputs of the same age (84th percentile)
High Attention Score compared to outputs of the same age and source (81st percentile)

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patent: 7 patents

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So far, Altmetric has seen 7 patents that reference this research output.

Zinc cadmium telluride single crystal substrate and its manufacturing method

Grant JP-7428750-B2

Japan

06 Feb 2024

Compound semiconductor and method for producing the same

Grant US-11552174-B2

United States of America

10 Jan 2023

Cadmium zinc telluride single crystal substrate and method for producing the same

Grant JP-7133476-B2

Japan

08 Sep 2022

CADMIUM ZINC TELLURIDE SINGLE CRYSTAL SUBSTRATE AND PRODUCTION METHOD THEREFOR

Application JP-2022113874-A

Japan

04 Aug 2022

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