Concentration profiles of antimony-doped shallow layers in silicon

Overview of attention for article published in Semiconductor Science & Technology, April 2004

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Vertical diode based memory cells having a lowered programming voltage and methods of…

Grant US-8349663-B2

United States of America

Laser anneal of vertically oriented semiconductor structures while maintaining a dopant…

Grant US-7615502-B2

United States of America

VERTICAL DIODE DOPED WITH ANTIMONY TO AVOID OR LIMIT DOPANT DIFFUSION

Application WO-2007058845-A3

World Intellectual Property Organisation (WIPO)

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