Comparative Study of T-Gate Structures in Nano-Channel GaN-on-SiC High Electron Mobility Transistors

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Comparative Study of T-Gate Structures in Nano-Channel GaN-on-SiC High Electron Mobility Transistors www.mdpi.com/2673-4591/12... By Yu-Chen Liu et al. From the 8th International Conference on Knowledge Innovation and Invention 2025 #Semiconductor #M…

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