The Preparation and High Photon-Sensing Properties of Fluorinated Tin Dioxide Nanowires

Overview of attention for article published in Journal of the Electrochemical Society, September 2009

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Metal-semiconductor contact structure with doped interlayer

Grant US-10049925-B2

United States of America

Metal-semiconductor contact structure with doped interlayer

Grant US-9466488-B2

United States of America

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