On-Chip Gate ESD Protection for AlGaN/GaN E-Mode Power HEMT Delivering >2kV HBM ESD Capability

Overview of attention for article published in this source, October 2019

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Integrated bidirectional ESD protection circuit for power semiconductor switching devices

Grant US-12107416-B2

United States of America

Electrostatic protection circuit, power GaN transistor and equipment terminal

Application CN-116230710-A

China

Normally-off HMET device with on-chip gate bounce protection

Application CN-113809067-A

China

Novel GaN-based ESD protection circuit

Application CN-113161345-A

China

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