A 4Mb Embedded SLC Resistive-RAM Macro with 7.2ns Read-Write Random-Access Time and 160ns MLC-Access Capability

Overview of attention for article published in this source, February 2011

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Memory device, semiconductor device, and electronic device

Grant US-12380938-B2

United States of America

Memory device, semiconductor device, and electronic device

Grant US-11875838-B2

United States of America

Hybrid framework of NVMe-based storage system in cloud computing environment

Grant US-10852990-B2

United States of America

THREE OR MORE RESISTIVE STATE RANDOM ACCESS MEMORY CELL

Grant KR-102118768-B1

Republic of Korea

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