Nano-scaled Ge FinFETs with Low Temperature Ferroelectric HfZrOx on Specific Interfacial Layers Exhibiting 65% S.S. Reduction and Improved ION

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Ferroelectric field effect transistor device

Grant US-11145740-B2

United States of America

The enhanced GaN HEMTs of stack gate containing ferroelectricity gate medium and…

Application CN-107369704-A

China

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