N-Channel Versus P-Channel Flash EEPROM- Which one has better reliabilities

Overview of attention for article published in this source, January 2001

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FinFET vertical flash memory

Grant US-10707224-B2

United States of America

FinFET vertical flash memory

Grant US-10002876-B2

United States of America

Semiconductor memory for capacitively biasing multiple source lines

Grant US-9417818-B2

United States of America

FINFET VERTICAL FLASH MEMORY

Application US-20160126249-A1

United States of America

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