High quality La/sub 2/O/sub 3/ and Al/sub 2/O/sub 3/ gate dielectrics with equivalent oxide thickness 5-10 /spl Aring/

Overview of attention for article published in this source, January 2000

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Graded dielectric structures

Grant US-9627501-B2

United States of America

Graded dielectric structures

Grant US-8951903-B2

United States of America

Ruthenium for a dielectric containing a lanthanide

Grant US-8907486-B2

United States of America

Memory device having a dielectric containing dysprosium doped hafnium oxide

Grant US-8742515-B2

United States of America

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