Microscopic structure of interfaces in Si1-xGex/Si heterostructures and superlattices studied by x-ray scattering and fluorescence yield

Overview of attention for article published in Physical Review B: Condensed Matter and Materials Physics, June 1993

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Methods of fabricating contact regions for FET incorporating SiGe

Grant US-8822282-B2

United States of America

Methods of forming strained-semiconductor-on-insulator device structures

Grant US-8748292-B2

United States of America

Methods for forming III-V semiconductor device structures

Grant US-7838392-B2

United States of America

Methods for forming strained-semiconductor-on-insulator device structures by mechanically…

Grant US-7588994-B2

United States of America

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