High-K Metal Gate Contact RRAM (CRRAM) in Pure 28nm CMOS Logic Process

Overview of attention for article published in this source, December 2012

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Physically unclonable function produced using OTP memory

Grant US-12483429-B2

United States of America

One-time programmable memories with ultra-low power read operation and novel sensing…

Grant US-11615859-B2

United States of America

One-time programmable memories with low power read operation and novel sensing scheme

Grant US-11062786-B2

United States of America

One-time programmable memory using gate-all-around structures

Grant US-11011577-B2

United States of America

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