Structural and electrical characteristics of atomic layer deposited high κ HfO2 on GaN

Overview of attention for article published in Applied Physics Letters, June 2007

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Enhancement-mode GaN MOSFET with low leakage current and improved reliability

Grant US-8940593-B2

United States of America

Enhancement-mode GaN MOSFET with low leakage current and improved reliability

Grant US-8624260-B2

United States of America

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