Broadband AlGaN/GaN HEMT MMIC Attenuators with High Dynamic Range

Overview of attention for article published in this source, October 2000

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Field effect transistors with gate electrodes having Ni and Ti metal layers

Grant US-9136111-B1

United States of America

Topside thermal management of semiconductor devices using boron phosphide contacting a…

Grant US-7919855-B2

United States of America

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