Drain E-Field Manipulation in AlGaN/GaN HEMTs by Schottky Extension Technology

Overview of attention for article published in IEEE Transactions on Electron Devices, January 2015

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High-electron-mobility transistor (HEMT) semiconductor devices with reduced dynamic…

Grant US-11538931-B2

United States of America

High-electron-mobility transistor (HEMT) semiconductor devices with reduced dynamic…

Grant US-10741682-B2

United States of America

HIGH-ELECTRON-MOBILITY TRANSISTOR (HEMT) SEMICONDUCTOR DEVICES WITH REDUCED DYNAMIC…

Application US-20180138306-A1

United States of America

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