High Performance Ultra-Thin Body (2.4nm) Poly-Si Junctionless Thin Film Transistors with a Trench Structure

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Constricted junctionless FinFET/nanowire/nanosheet device having cascode portion

Grant US-10777638-B1

United States of America

Fin field effect transistor (finFET) device structure with ultra-thin body and method for…

Grant US-10361085-B2

United States of America

Fin field effect transistor (FinFET) device structure with ultra-thin body and method for…

Grant US-9620645-B1

United States of America

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