7.4 A 256b-Wordlength ReRAM-based TCAM with 1ns Search-Time and 14× Improvement in WordLength-EnergyEfficiency-Density Product Using 2.5T1R cell

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Field-programmable ferro-diodes for reconfigurable in-memory-computing

Grant US-12597456-B2

United States of America

Semiconductor storage device

Grant US-12112807-B2

United States of America

Resistive random access memory integrated with stacked vertical transistors

Grant US-11164907-B2

United States of America

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