Selective reactive ion etching for short-gate-length GaAs/AlGaAs/InGaAs pseudomorphic modulation-doped field-effect transistors

Overview of attention for article published in Journal of Vacuum Science & Technology: Part B, November 1989

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Method of fabricating Group III-V compound semiconductor devices using selective etching

Grant US-RE36185-E

United States of America

Method of fabricating group III-V compound

Grant US-5374328-A

United States of America

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