Enhanced n-type dopant solubility in tensile-strained Si

Overview of attention for article published in Thin Solid Films, November 2008

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FinFET source-drain merged by silicide-based material

Grant US-9595524-B2

United States of America

FinFET source-drain merged by silicide-based material

Grant US-9543167-B2

United States of America

Forming wrap-around silicide contact on finFET

Grant US-9397197-B1

United States of America

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