The temperature dependence of 1.3- and 1.5-/spl mu/m compressively strained InGaAs(P) MQW semiconductor lasers

Overview of attention for article published in IEEE Journal of Selected Topics in Quantum Electronics, January 1999

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High efficiency intersubband semiconductor lasers

Grant US-7856042-B2

United States of America

Quantum well lasers with strained quantum wells and dilute nitride barriers

Grant US-7457338-B2

United States of America

High efficiency intersubband semiconductor lasers

Grant US-7403552-B2

United States of America

Type II quantum well mid-infrared optoelectronic devices

Grant US-7256417-B2

United States of America

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