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The effects of ion implantation on the interdiffusion coefficients in In x Ga1− x As/GaAs quantum well structures

Overview of attention for article published in Journal of Applied Physics, February 1993
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  • In the top 25% of all research outputs scored by Altmetric
  • High Attention Score compared to outputs of the same age (84th percentile)
  • High Attention Score compared to outputs of the same age and source (81st percentile)

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