Formation of etch-stop structures utilizing ion-beam synthesized buried oxide and nitride layers in silicon

Overview of attention for article published in Sensors and Actuators, August 1989

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In the top 25% of all research outputs scored by Altmetric
Among the highest-scoring outputs from this source (#11 of 206)
High Attention Score compared to outputs of the same age (88th percentile)
High Attention Score compared to outputs of the same age and source (85th percentile)

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patent: 5 patents

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So far, Altmetric has seen 5 patents that reference this research output.

Method for structuring material surface of substrate for producing e.g. nanometric…

Application FR-2998090-A1

France

16 May 2014

Micro-electro-mechanics systems (MEMS)

Grant US-6128961-A

United States of America

10 Oct 2000

Semiconductor having self-aligned, buried etch stop for trench and manufacture thereof

Grant US-6110794-A

United States of America

29 Aug 2000

Mfr. of insulating, monocrystalline silicon@ island for microelectronic IC - by oxygen…

Application DE-4127925-A1

Germany

25 Feb 1993

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