Valence and conduction band offsets of a ZrO2/SiOxNy/n‐Si CMOS gate stack: A combined photoemission and inverse photoemission study

Overview of attention for article published in Physica Status Solidi (B) - Basic Solid State Physics, July 2004

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Bipolar CMOS select device for resistive sense memory

Grant US-9030867-B2

United States of America

Tunneling transistors

Grant US-8648426-B2

United States of America

Bit line charge accumulation sensing for resistive changing memory

Grant US-8638597-B2

United States of America

Bipolar select device for resistive sense memory

Grant US-8514608-B2

United States of America

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